JAN2N3501UB
Tillverkare
MICROCHIP TECHNOLOGY
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 150V 0.3A UB
TRANS NPN 150V 0.3A UB
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 150 V 300 mA 500 mW Ytmonterad UB
Bipolär (BJT) Transistor NPN 150 V 300 mA 500 mW Ytmonterad UB
Beskrivning (eng)
Beskrivning (eng)
The JAN2N3501UB is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 150V, a collector current rating of 300mA, and a power dissipation capability of 500mW. This surface-mounted device is ideal for switching and amplification tasks in compact circuit designs. Its robust construction ensures reliability in demanding environments, making it suitable for consumer electronics, automotive, and industrial applications.
The JAN2N3501UB is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 150V, a collector current rating of 300mA, and a power dissipation capability of 500mW. This surface-mounted device is ideal for switching and amplification tasks in compact circuit designs. Its robust construction ensures reliability in demanding environments, making it suitable for consumer electronics, automotive, and industrial applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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