JAN1N5822US
Tillverkare
MICROCHIP TECHNOLOGY
Specifikation
Specifikation
DIODE SCHOTTKY 40V 3A B SQ-MELF
DIODE SCHOTTKY 40V 3A B SQ-MELF
Detaljerad specifikation
Detaljerad specifikation
Diode 40 V 3A ytmonterad B, SQ-MELF
Diode 40 V 3A ytmonterad B, SQ-MELF
Beskrivning (eng)
Beskrivning (eng)
The JAN1N5822US is a Schottky diode designed for high-efficiency applications, featuring a maximum reverse voltage of 40V and a forward current rating of 3A. This surface-mounted device is housed in a SQ-MELF package, which provides excellent thermal performance and space-saving benefits. The diode's low forward voltage drop ensures minimal power loss, making it ideal for power management and rectification in various electronic circuits. Its robust construction and reliability make it suitable for demanding environments.
The JAN1N5822US is a Schottky diode designed for high-efficiency applications, featuring a maximum reverse voltage of 40V and a forward current rating of 3A. This surface-mounted device is housed in a SQ-MELF package, which provides excellent thermal performance and space-saving benefits. The diode's low forward voltage drop ensures minimal power loss, making it ideal for power management and rectification in various electronic circuits. Its robust construction and reliability make it suitable for demanding environments.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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