J112
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
JFET N-CH 35V TO92-3
JFET N-CH 35V TO92-3
Detaljerad specifikation
Detaljerad specifikation
JFET N-kanal 35 V 625 mW Genom hål TO-92-3
JFET N-kanal 35 V 625 mW Genom hål TO-92-3
Beskrivning (eng)
Beskrivning (eng)
The J112 is an N-Channel JFET transistor designed for applications requiring a maximum drain-gate voltage of -35 Vdc and a gate-source voltage of -35 Vdc. It features a total device dissipation of 625 mW and operates within a temperature range of -65 to +150 °C. The device is housed in a TO-92-3 package.
The J112 is an N-Channel JFET transistor designed for applications requiring a maximum drain-gate voltage of -35 Vdc and a gate-source voltage of -35 Vdc. It features a total device dissipation of 625 mW and operates within a temperature range of -65 to +150 °C. The device is housed in a TO-92-3 package.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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