J111-D26Z
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
JFET N-CH 35V TO92-3
JFET N-CH 35V TO92-3
Detaljerad specifikation
Detaljerad specifikation
JFET N-kanal 35 V 625 mW Genom hål TO-92-3
JFET N-kanal 35 V 625 mW Genom hål TO-92-3
Beskrivning (eng)
Beskrivning (eng)
The J111-D26Z from onsemi is an N-Channel JFET designed for applications requiring a maximum drain-source voltage of 35V and a power dissipation of 625 mW. This device is housed in a TO-92-3 package, making it suitable for through-hole mounting. The JFET features low noise and high input impedance, making it ideal for use in analog signal processing, RF amplification, and switching applications. Its robust design ensures reliable performance in various electronic circuits, providing engineers with a versatile component for their designs.
The J111-D26Z from onsemi is an N-Channel JFET designed for applications requiring a maximum drain-source voltage of 35V and a power dissipation of 625 mW. This device is housed in a TO-92-3 package, making it suitable for through-hole mounting. The JFET features low noise and high input impedance, making it ideal for use in analog signal processing, RF amplification, and switching applications. Its robust design ensures reliable performance in various electronic circuits, providing engineers with a versatile component for their designs.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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