IXFN100N50Q3
Tillverkare
IXYS
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 500V 82A SOT227B
MOSFET N-CH 500V 82A SOT227B
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 500 V 82A (Tc) 960W (Tc) Chassi Montera SOT-227B
N-Kanal 500 V 82A (Tc) 960W (Tc) Chassi Montera SOT-227B
Beskrivning (eng)
Beskrivning (eng)
The IXFN100N50Q3 is an N-Channel MOSFET rated for 500V and 82A, housed in a SOT-227B package. It features a maximum power dissipation of 960W and a low RDS(on) of 49 mΩ at VGS = 10V and ID = 50A. This device is designed for high power density applications, ensuring efficient performance in demanding environments.
The IXFN100N50Q3 is an N-Channel MOSFET rated for 500V and 82A, housed in a SOT-227B package. It features a maximum power dissipation of 960W and a low RDS(on) of 49 mΩ at VGS = 10V and ID = 50A. This device is designed for high power density applications, ensuring efficient performance in demanding environments.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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