IRFM120ATF
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 100V 2.3A SOT223-4
MOSFET N-CH 100V 2.3A SOT223-4
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 100 V 2.3A (Ta) 2.4W (Ta) ytmonterad SOT-223-4
N-Kanal 100 V 2.3A (Ta) 2.4W (Ta) ytmonterad SOT-223-4
Beskrivning (eng)
Beskrivning (eng)
The IRFM120ATF is an N-Channel MOSFET with a maximum Drain-Source Voltage (BVDSS) of 100 V and a continuous Drain Current (ID) of 2.3 A. It features a low on-state resistance (RDS(on)) of 0.2 Ω and a total power dissipation of 2.4 W. This device is housed in a SOT-223-4 package, making it suitable for surface-mounted applications in various electronic circuits.
The IRFM120ATF is an N-Channel MOSFET with a maximum Drain-Source Voltage (BVDSS) of 100 V and a continuous Drain Current (ID) of 2.3 A. It features a low on-state resistance (RDS(on)) of 0.2 Ω and a total power dissipation of 2.4 W. This device is housed in a SOT-223-4 package, making it suitable for surface-mounted applications in various electronic circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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