IRF840SPBF
Tillverkare
SILICONIX
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 500V 8A D2PAK
MOSFET N-CH 500V 8A D2PAK
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 500 V 8A (Tc) 3.1W (Ta), 125W (Tc) ytmonterad TO-263 (D2PAK)
N-Kanal 500 V 8A (Tc) 3.1W (Ta), 125W (Tc) ytmonterad TO-263 (D2PAK)
Beskrivning (eng)
Beskrivning (eng)
The IRF840SPBF is a high-performance N-Channel MOSFET designed for applications requiring high voltage and current handling. It features a maximum Drain-Source Voltage (VDS) of 500V and a continuous Drain Current (ID) of 8A at a case temperature of 25°C. The device is housed in a D2PAK (TO-263) package, providing excellent thermal performance with a maximum power dissipation of 125W. Its low on-state resistance (RDS(on)) of 0.85Ω at VGS = 10V ensures efficient operation in demanding environments.
The IRF840SPBF is a high-performance N-Channel MOSFET designed for applications requiring high voltage and current handling. It features a maximum Drain-Source Voltage (VDS) of 500V and a continuous Drain Current (ID) of 8A at a case temperature of 25°C. The device is housed in a D2PAK (TO-263) package, providing excellent thermal performance with a maximum power dissipation of 125W. Its low on-state resistance (RDS(on)) of 0.85Ω at VGS = 10V ensures efficient operation in demanding environments.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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