IRF840PBF
Tillverkare
SILICONIX
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 500V 8A TO220AB
MOSFET N-CH 500V 8A TO220AB
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 500 V 8A (Tc) 125W (Tc) Genomgående hål TO-220AB
N-Kanal 500 V 8A (Tc) 125W (Tc) Genomgående hål TO-220AB
Beskrivning (eng)
Beskrivning (eng)
The IRF840PBF is a third-generation N-Channel MOSFET designed for high-voltage applications. It features a maximum Drain-Source Voltage (VDS) of 500 V and a continuous Drain Current (ID) of 8 A at a case temperature (Tc) of 25 °C. The device is housed in a TO-220AB package, providing low thermal resistance and cost-effectiveness, making it suitable for commercial and industrial applications.
The IRF840PBF is a third-generation N-Channel MOSFET designed for high-voltage applications. It features a maximum Drain-Source Voltage (VDS) of 500 V and a continuous Drain Current (ID) of 8 A at a case temperature (Tc) of 25 °C. The device is housed in a TO-220AB package, providing low thermal resistance and cost-effectiveness, making it suitable for commercial and industrial applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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