IRF840LCSTRRPBF
Tillverkare
SILICONIX
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 500V 8A TO263AB
MOSFET N-CH 500V 8A TO263AB
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 500 V 8A (Tc) 3.1W (Ta), 125W (Tc) ytmonterad TO-263 (D2PAK)
N-Kanal 500 V 8A (Tc) 3.1W (Ta), 125W (Tc) ytmonterad TO-263 (D2PAK)
Beskrivning (eng)
Beskrivning (eng)
The IRF840LCSTRRPBF is an N-Channel MOSFET designed for high-frequency applications, featuring a maximum Drain-Source Voltage (VDS) of 500V and a continuous Drain Current (ID) of 8A at a case temperature (Tc) of 25°C. It has an on-state resistance (RDS(on)) of 0.85Ω at VGS = 10V, with a total gate charge (Qg) of 39nC, making it suitable for efficient power management in various electronic circuits.
The IRF840LCSTRRPBF is an N-Channel MOSFET designed for high-frequency applications, featuring a maximum Drain-Source Voltage (VDS) of 500V and a continuous Drain Current (ID) of 8A at a case temperature (Tc) of 25°C. It has an on-state resistance (RDS(on)) of 0.85Ω at VGS = 10V, with a total gate charge (Qg) of 39nC, making it suitable for efficient power management in various electronic circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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