IRF830LPBF
Tillverkare
SILICONIX
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 500V 4.5A TO262-3
MOSFET N-CH 500V 4.5A TO262-3
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 500 V 4.5A (Tc) 3.1W (Ta), 74W (Tc) Genomgående hål TO-262-3
N-Kanal 500 V 4.5A (Tc) 3.1W (Ta), 74W (Tc) Genomgående hål TO-262-3
Beskrivning (eng)
Beskrivning (eng)
The IRF830LPBF is an N-Channel MOSFET rated for 500V and 4.5A continuous drain current. It features a low on-state resistance (RDS(on)) of 1.5Ω at VGS = 10V, with a maximum power dissipation of 74W at Tc = 25°C. This device is designed for high-efficiency applications requiring fast switching and rugged performance.
The IRF830LPBF is an N-Channel MOSFET rated for 500V and 4.5A continuous drain current. It features a low on-state resistance (RDS(on)) of 1.5Ω at VGS = 10V, with a maximum power dissipation of 74W at Tc = 25°C. This device is designed for high-efficiency applications requiring fast switching and rugged performance.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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