IRF830APBF
Tillverkare
SILICONIX
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 500V 5A TO220AB
MOSFET N-CH 500V 5A TO220AB
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 500 V 5A (Tc) 74W (Tc) Genomgående hål TO-220AB
N-Kanal 500 V 5A (Tc) 74W (Tc) Genomgående hål TO-220AB
Beskrivning (eng)
Beskrivning (eng)
The IRF830APBF is an N-Channel MOSFET designed for high voltage applications, featuring a maximum drain-source voltage (VDS) of 500V and a continuous drain current (ID) of 5A. It is housed in a TO-220AB package and supports a maximum power dissipation of 74W. The device exhibits low on-state resistance (RDS(on)) of 1.4Ω at VGS = 10V, making it suitable for efficient power switching applications.
The IRF830APBF is an N-Channel MOSFET designed for high voltage applications, featuring a maximum drain-source voltage (VDS) of 500V and a continuous drain current (ID) of 5A. It is housed in a TO-220AB package and supports a maximum power dissipation of 74W. The device exhibits low on-state resistance (RDS(on)) of 1.4Ω at VGS = 10V, making it suitable for efficient power switching applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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