IRF820LPBF
Tillverkare
SILICONIX
Specifikation
Specifikation
MOSFET N-CH 500V 2.5A I2PAK
MOSFET N-CH 500V 2.5A I2PAK
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 500 V 2.5A (Tc) 3.1W (Ta), 50W (Tc) Genomgående hål I2PAK
N-Kanal 500 V 2.5A (Tc) 3.1W (Ta), 50W (Tc) Genomgående hål I2PAK
Beskrivning (eng)
Beskrivning (eng)
The IRF820LPBF is an N-Channel MOSFET designed for high-voltage applications, featuring a maximum drain-source voltage of 500V and a continuous drain current rating of 2.5A at a case temperature (Tc). This device is housed in an I2PAK package, allowing for efficient thermal management with a power dissipation capability of 3.1W at ambient temperature (Ta) and up to 50W at Tc. Its robust construction makes it suitable for various power switching applications, ensuring reliable performance in demanding environments.
The IRF820LPBF is an N-Channel MOSFET designed for high-voltage applications, featuring a maximum drain-source voltage of 500V and a continuous drain current rating of 2.5A at a case temperature (Tc). This device is housed in an I2PAK package, allowing for efficient thermal management with a power dissipation capability of 3.1W at ambient temperature (Ta) and up to 50W at Tc. Its robust construction makes it suitable for various power switching applications, ensuring reliable performance in demanding environments.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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