IRF820APBF
Tillverkare
SILICONIX
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 500V 2.5A TO220AB
MOSFET N-CH 500V 2.5A TO220AB
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 500 V 2.5A (Tc) 50W (Tc) Genomgående hål TO-220AB
N-Kanal 500 V 2.5A (Tc) 50W (Tc) Genomgående hål TO-220AB
Beskrivning (eng)
Beskrivning (eng)
The IRF820APBF is an N-Channel MOSFET designed for high voltage applications, featuring a maximum drain-source voltage (VDS) of 500V and a continuous drain current (ID) of 2.5A at a case temperature (Tc) of 25°C. It has a low on-state resistance (RDS(on)) of 3.0Ω at VGS of 10V and a maximum power dissipation of 50W. This device is housed in a TO-220AB package, making it suitable for through-hole mounting in various power applications.
The IRF820APBF is an N-Channel MOSFET designed for high voltage applications, featuring a maximum drain-source voltage (VDS) of 500V and a continuous drain current (ID) of 2.5A at a case temperature (Tc) of 25°C. It has a low on-state resistance (RDS(on)) of 3.0Ω at VGS of 10V and a maximum power dissipation of 50W. This device is housed in a TO-220AB package, making it suitable for through-hole mounting in various power applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Hämta lagerstatus
Kontakta säljare
Kontakta Lukas eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K