IRF740ASPBF
Tillverkare
SILICONIX
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 400V 10A D2PAK
MOSFET N-CH 400V 10A D2PAK
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 400 V 10A (Tc) 3.1W (Ta), 125W (Tc) Ytmonterad TO-263 (D2PAK)
N-Kanal 400 V 10A (Tc) 3.1W (Ta), 125W (Tc) Ytmonterad TO-263 (D2PAK)
Beskrivning (eng)
Beskrivning (eng)
The IRF740ASPBF is a N-Channel MOSFET designed for high voltage applications, featuring a maximum Drain-Source Voltage (VDS) of 400V and a continuous Drain Current (ID) of 10A. It has a low on-state resistance (RDS(on)) of 0.55Ω at VGS = 10V, with a total gate charge (Qg) of 36nC, making it suitable for efficient power switching. The device is housed in a D2PAK (TO-263) package, ensuring robust thermal performance with a maximum power dissipation of 125W at Tc = 25°C.
The IRF740ASPBF is a N-Channel MOSFET designed for high voltage applications, featuring a maximum Drain-Source Voltage (VDS) of 400V and a continuous Drain Current (ID) of 10A. It has a low on-state resistance (RDS(on)) of 0.55Ω at VGS = 10V, with a total gate charge (Qg) of 36nC, making it suitable for efficient power switching. The device is housed in a D2PAK (TO-263) package, ensuring robust thermal performance with a maximum power dissipation of 125W at Tc = 25°C.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Hämta lagerstatus
Kontakta säljare
Kontakta Richard eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K