IRF730SPBF
Tillverkare
SILICONIX
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 400V 5.5A D2PAK
MOSFET N-CH 400V 5.5A D2PAK
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 400 V 5.5A (Tc) 3.1W (Ta), 74W (Tc) ytmonterad TO-263 (D2PAK)
N-Kanal 400 V 5.5A (Tc) 3.1W (Ta), 74W (Tc) ytmonterad TO-263 (D2PAK)
Beskrivning (eng)
Beskrivning (eng)
The IRF730SPBF is a N-Channel MOSFET designed for high voltage applications, featuring a maximum Drain-Source Voltage (VDS) of 400V and a continuous Drain Current (ID) of 5.5A at a case temperature (Tc) of 25°C. It has a low on-state resistance (RDS(on)) of 1.0Ω at VGS of 10V, making it suitable for efficient power management in surface-mounted configurations. The device is housed in a D2PAK (TO-263) package, allowing for effective thermal dissipation and fast switching capabilities.
The IRF730SPBF is a N-Channel MOSFET designed for high voltage applications, featuring a maximum Drain-Source Voltage (VDS) of 400V and a continuous Drain Current (ID) of 5.5A at a case temperature (Tc) of 25°C. It has a low on-state resistance (RDS(on)) of 1.0Ω at VGS of 10V, making it suitable for efficient power management in surface-mounted configurations. The device is housed in a D2PAK (TO-263) package, allowing for effective thermal dissipation and fast switching capabilities.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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