IRF730PBF
Tillverkare
SILICONIX
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 400V 5.5A TO220AB
MOSFET N-CH 400V 5.5A TO220AB
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 400 V 5.5A (Tc) 74W (Tc) Genomgående hål TO-220AB
N-Kanal 400 V 5.5A (Tc) 74W (Tc) Genomgående hål TO-220AB
Beskrivning (eng)
Beskrivning (eng)
The IRF730PBF is a third-generation N-Channel MOSFET from Vishay Siliconix, featuring a maximum drain-source voltage (VDS) of 400V and a continuous drain current (ID) of 5.5A at a case temperature (Tc) of 25°C. It is housed in a TO-220AB package, offering low on-state resistance (RDS(on)) of 1.0Ω at VGS of 10V, and a maximum power dissipation of 74W. This device is designed for fast switching applications and is suitable for commercial and industrial use.
The IRF730PBF is a third-generation N-Channel MOSFET from Vishay Siliconix, featuring a maximum drain-source voltage (VDS) of 400V and a continuous drain current (ID) of 5.5A at a case temperature (Tc) of 25°C. It is housed in a TO-220AB package, offering low on-state resistance (RDS(on)) of 1.0Ω at VGS of 10V, and a maximum power dissipation of 74W. This device is designed for fast switching applications and is suitable for commercial and industrial use.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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