IRF730APBF
Tillverkare
SILICONIX
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 400V 5.5A TO220AB
MOSFET N-CH 400V 5.5A TO220AB
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 400 V 5.5A (Tc) 74W (Tc) Genomgående hål TO-220AB
N-Kanal 400 V 5.5A (Tc) 74W (Tc) Genomgående hål TO-220AB
Beskrivning (eng)
Beskrivning (eng)
The IRF730APBF is an N-Channel MOSFET designed for high voltage applications, featuring a maximum drain-source voltage (VDS) of 400V and a continuous drain current (ID) of 5.5A at a case temperature (Tc) of 25°C. It has a low on-state resistance (RDS(on)) of 1.0Ω at VGS = 10V and a maximum power dissipation of 74W. This device is suitable for switch mode power supplies and high-speed power switching applications.
The IRF730APBF is an N-Channel MOSFET designed for high voltage applications, featuring a maximum drain-source voltage (VDS) of 400V and a continuous drain current (ID) of 5.5A at a case temperature (Tc) of 25°C. It has a low on-state resistance (RDS(on)) of 1.0Ω at VGS = 10V and a maximum power dissipation of 74W. This device is suitable for switch mode power supplies and high-speed power switching applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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