IRF710PBF
Tillverkare
SILICONIX
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 400V 2A TO220AB
MOSFET N-CH 400V 2A TO220AB
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 400 V 2A (Tc) 36W (Tc) Genomgående hål TO-220AB
N-Kanal 400 V 2A (Tc) 36W (Tc) Genomgående hål TO-220AB
Beskrivning (eng)
Beskrivning (eng)
The IRF710PBF is a third-generation N-Channel MOSFET designed for high-voltage applications. It features a maximum drain-source voltage (VDS) of 400V, continuous drain current (ID) of 2A, and a power dissipation of 36W. The device is housed in a TO-220AB package, offering low on-state resistance (RDS(on)) of 3.6Ω at VGS = 10V, making it suitable for efficient power management in various applications.
The IRF710PBF is a third-generation N-Channel MOSFET designed for high-voltage applications. It features a maximum drain-source voltage (VDS) of 400V, continuous drain current (ID) of 2A, and a power dissipation of 36W. The device is housed in a TO-220AB package, offering low on-state resistance (RDS(on)) of 3.6Ω at VGS = 10V, making it suitable for efficient power management in various applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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