IRF640SPBF
Tillverkare
SILICONIX
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 200V 18A D2PAK
MOSFET N-CH 200V 18A D2PAK
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 200 V 18A (Tc) 3.1W (Ta), 130W (Tc) ytmonterad TO-263 (D2PAK)
N-Kanal 200 V 18A (Tc) 3.1W (Ta), 130W (Tc) ytmonterad TO-263 (D2PAK)
Beskrivning (eng)
Beskrivning (eng)
The IRF640SPBF is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 200V and a continuous Drain Current (ID) of 18A. It features a low on-state resistance (RDS(on)) of 0.18Ω at VGS = 10V, making it suitable for high-efficiency applications. The device is housed in a D2PAK (TO-263) package, allowing for effective thermal management and fast switching capabilities.
The IRF640SPBF is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 200V and a continuous Drain Current (ID) of 18A. It features a low on-state resistance (RDS(on)) of 0.18Ω at VGS = 10V, making it suitable for high-efficiency applications. The device is housed in a D2PAK (TO-263) package, allowing for effective thermal management and fast switching capabilities.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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