IRF640PBF
Tillverkare
SILICONIX
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 200V 18A TO220AB
MOSFET N-CH 200V 18A TO220AB
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 200 V 18A (Tc) 125W (Tc) Genomgående hål TO-220AB
N-Kanal 200 V 18A (Tc) 125W (Tc) Genomgående hål TO-220AB
Beskrivning (eng)
Beskrivning (eng)
The IRF640PBF is an N-Channel MOSFET rated for 200V and 18A, housed in a TO-220AB package. It features low on-state resistance (RDS(on) = 0.18 Ω at VGS = 10V), fast switching capabilities, and a maximum power dissipation of 125W. This third-generation power MOSFET is designed for high efficiency and reliability in various applications.
The IRF640PBF is an N-Channel MOSFET rated for 200V and 18A, housed in a TO-220AB package. It features low on-state resistance (RDS(on) = 0.18 Ω at VGS = 10V), fast switching capabilities, and a maximum power dissipation of 125W. This third-generation power MOSFET is designed for high efficiency and reliability in various applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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