IRF630SPBF
Tillverkare
SILICONIX
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 200V 9A D2PAK
MOSFET N-CH 200V 9A D2PAK
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 200 V 9A (Tc) 3W (Ta), 74W (Tc) ytmonterad TO-263 (D2PAK)
N-Kanal 200 V 9A (Tc) 3W (Ta), 74W (Tc) ytmonterad TO-263 (D2PAK)
Beskrivning (eng)
Beskrivning (eng)
The IRF630SPBF is a N-Channel MOSFET with a maximum drain-source voltage (VDS) of 200V and a continuous drain current (ID) of 9A at a case temperature (Tc) of 25°C. It features a low on-state resistance (RDS(on)) of 0.40Ω at VGS of 10V, making it suitable for high-efficiency applications. The device is housed in a D2PAK (TO-263) surface mount package, capable of dissipating up to 74W, and is designed for fast switching and ease of paralleling.
The IRF630SPBF is a N-Channel MOSFET with a maximum drain-source voltage (VDS) of 200V and a continuous drain current (ID) of 9A at a case temperature (Tc) of 25°C. It features a low on-state resistance (RDS(on)) of 0.40Ω at VGS of 10V, making it suitable for high-efficiency applications. The device is housed in a D2PAK (TO-263) surface mount package, capable of dissipating up to 74W, and is designed for fast switching and ease of paralleling.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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