IRF624PBF
Tillverkare
SILICONIX
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 250V 4.4A TO220AB
MOSFET N-CH 250V 4.4A TO220AB
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 250 V 4.4A (Tc) 50W (Tc) Genomgående hål TO-220AB
N-Kanal 250 V 4.4A (Tc) 50W (Tc) Genomgående hål TO-220AB
Beskrivning (eng)
Beskrivning (eng)
The IRF624PBF is a third-generation N-Channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage (VDS) of 250V, continuous drain current (ID) of 4.4A, and a power dissipation capability of 50W. The device is housed in a TO-220AB package, offering low thermal resistance and ease of use in commercial and industrial applications. With a low on-state resistance (RDS(on)) of 1.1Ω at VGS = 10V, it ensures efficient operation in demanding environments.
The IRF624PBF is a third-generation N-Channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage (VDS) of 250V, continuous drain current (ID) of 4.4A, and a power dissipation capability of 50W. The device is housed in a TO-220AB package, offering low thermal resistance and ease of use in commercial and industrial applications. With a low on-state resistance (RDS(on)) of 1.1Ω at VGS = 10V, it ensures efficient operation in demanding environments.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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