IRF620SPBF
Tillverkare
SILICONIX
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 200V 5.2A D2PAK
MOSFET N-CH 200V 5.2A D2PAK
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 200 V 5.2A (Tc) 3W (Ta), 50W (Tc) ytmonterad TO-263 (D2PAK)
N-Kanal 200 V 5.2A (Tc) 3W (Ta), 50W (Tc) ytmonterad TO-263 (D2PAK)
Beskrivning (eng)
Beskrivning (eng)
The IRF620SPBF is an N-Channel MOSFET with a maximum drain-source voltage (VDS) of 200 V and a continuous drain current (ID) of 5.2 A at a case temperature (Tc) of 25 °C. It features a low on-state resistance (RDS(on)) of 0.80 Ω at VGS = 10 V, making it suitable for high current applications. The device is housed in a D2PAK (TO-263) surface mount package, capable of dissipating up to 50 W, and is designed for fast switching and ease of paralleling.
The IRF620SPBF is an N-Channel MOSFET with a maximum drain-source voltage (VDS) of 200 V and a continuous drain current (ID) of 5.2 A at a case temperature (Tc) of 25 °C. It features a low on-state resistance (RDS(on)) of 0.80 Ω at VGS = 10 V, making it suitable for high current applications. The device is housed in a D2PAK (TO-263) surface mount package, capable of dissipating up to 50 W, and is designed for fast switching and ease of paralleling.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Hämta lagerstatus
Kontakta säljare
Kontakta Lukas eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K