IRF610STRRPBF
Tillverkare
SILICONIX
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 200V 3.3A D2PAK
MOSFET N-CH 200V 3.3A D2PAK
Detaljerad specifikation
Detaljerad specifikation
N-kanal 200 V 3.3A (Tc) 3W (Ta), 36W (Tc) ytmonterad TO-263 (D2PAK)
N-kanal 200 V 3.3A (Tc) 3W (Ta), 36W (Tc) ytmonterad TO-263 (D2PAK)
Beskrivning (eng)
Beskrivning (eng)
The IRF610STRRPBF is a third-generation N-Channel MOSFET from Vishay Siliconix, featuring a maximum Drain-Source Voltage (VDS) of 200V and a continuous Drain Current (ID) of 3.3A at a case temperature (Tc) of 25°C. It is housed in a D2PAK (TO-263) surface mount package, capable of dissipating up to 36W. The device exhibits low on-state resistance (RDS(on)) of 1.5Ω at VGS = 10V, making it suitable for high-efficiency applications.
The IRF610STRRPBF is a third-generation N-Channel MOSFET from Vishay Siliconix, featuring a maximum Drain-Source Voltage (VDS) of 200V and a continuous Drain Current (ID) of 3.3A at a case temperature (Tc) of 25°C. It is housed in a D2PAK (TO-263) surface mount package, capable of dissipating up to 36W. The device exhibits low on-state resistance (RDS(on)) of 1.5Ω at VGS = 10V, making it suitable for high-efficiency applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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