IRF610PBF
Tillverkare
SILICONIX
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 200V 3.3A TO220AB
MOSFET N-CH 200V 3.3A TO220AB
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 200 V 3.3A (Tc) 36W (Tc) Genomgående hål TO-220AB
N-Kanal 200 V 3.3A (Tc) 36W (Tc) Genomgående hål TO-220AB
Beskrivning (eng)
Beskrivning (eng)
The IRF610PBF is an N-Channel MOSFET rated for 200V and 3.3A (Tc) with a maximum power dissipation of 36W (Tc). It is housed in a TO-220AB package, suitable for through-hole mounting. This device is designed for high-efficiency switching applications, providing reliable performance in various electronic circuits.
The IRF610PBF is an N-Channel MOSFET rated for 200V and 3.3A (Tc) with a maximum power dissipation of 36W (Tc). It is housed in a TO-220AB package, suitable for through-hole mounting. This device is designed for high-efficiency switching applications, providing reliable performance in various electronic circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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