IRF610LPBF
Tillverkare
SILICONIX
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 200V 3.3A I2PAK
MOSFET N-CH 200V 3.3A I2PAK
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 200 V 3.3A (Tc) 3W (Ta), 36W (Tc) Genomgående hål I2PAK
N-Kanal 200 V 3.3A (Tc) 3W (Ta), 36W (Tc) Genomgående hål I2PAK
Beskrivning (eng)
Beskrivning (eng)
The IRF610LPBF is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 200 V and a continuous Drain Current (ID) of 3.3 A. It features a low on-state resistance (RDS(on)) of 1.5 Ω at VGS = 10 V, making it suitable for high-efficiency applications. The device is housed in an I2PAK package, allowing for effective thermal management with a maximum power dissipation of 36 W.
The IRF610LPBF is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 200 V and a continuous Drain Current (ID) of 3.3 A. It features a low on-state resistance (RDS(on)) of 1.5 Ω at VGS = 10 V, making it suitable for high-efficiency applications. The device is housed in an I2PAK package, allowing for effective thermal management with a maximum power dissipation of 36 W.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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