IRF510STRRPBF
Tillverkare
SILICONIX
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 100V 5.6A TO263
MOSFET N-CH 100V 5.6A TO263
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 100 V 5.6A (Tc) 3.7W (Ta), 43W (Tc) ytmonterad TO-263 (D2PAK)
N-Kanal 100 V 5.6A (Tc) 3.7W (Ta), 43W (Tc) ytmonterad TO-263 (D2PAK)
Beskrivning (eng)
Beskrivning (eng)
The IRF510STRRPBF is an N-Channel MOSFET with a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 5.6A. It features a low on-state resistance (RDS(on)) of 0.54Ω at VGS of 10V, and a maximum power dissipation of 43W at TC of 25°C. This surface-mounted TO-263 package is designed for high current applications, providing fast switching and rugged performance.
The IRF510STRRPBF is an N-Channel MOSFET with a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 5.6A. It features a low on-state resistance (RDS(on)) of 0.54Ω at VGS of 10V, and a maximum power dissipation of 43W at TC of 25°C. This surface-mounted TO-263 package is designed for high current applications, providing fast switching and rugged performance.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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