HUF75639S3ST
Tillverkare
FAIRCHILD SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
POWER FIELD-EFFECT TRANSISTOR, 5
POWER FIELD-EFFECT TRANSISTOR, 5
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 100 V 56A (Tc) 200W (Tc) ytmonterad TO-263 (D2PAK)
N-Kanal 100 V 56A (Tc) 200W (Tc) ytmonterad TO-263 (D2PAK)
Beskrivning (eng)
Beskrivning (eng)
The HUF75639S3ST is a high-performance N-Channel Power Field-Effect Transistor (FET) designed for efficient switching applications. It features a maximum drain-source voltage of 100 V and a continuous drain current rating of 56 A at a case temperature (Tc) of 25°C. The device can handle a power dissipation of up to 200 W (Tc), making it suitable for high-power applications. Packaged in a surface mount TO-263 (D2PAK) configuration, it offers excellent thermal performance and is ideal for space-constrained designs.
The HUF75639S3ST is a high-performance N-Channel Power Field-Effect Transistor (FET) designed for efficient switching applications. It features a maximum drain-source voltage of 100 V and a continuous drain current rating of 56 A at a case temperature (Tc) of 25°C. The device can handle a power dissipation of up to 200 W (Tc), making it suitable for high-power applications. Packaged in a surface mount TO-263 (D2PAK) configuration, it offers excellent thermal performance and is ideal for space-constrained designs.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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