HUF75542P3
Tillverkare
FAIRCHILD SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
POWER FIELD-EFFECT TRANSISTOR, 7
POWER FIELD-EFFECT TRANSISTOR, 7
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 80 V 75A (Tc) 230W (Tc) Genomgående hål TO-220-3
N-Kanal 80 V 75A (Tc) 230W (Tc) Genomgående hål TO-220-3
Beskrivning (eng)
Beskrivning (eng)
The HUF75542P3 is a high-performance N-Channel Power Field-Effect Transistor (FET) designed for demanding applications. It features a maximum drain-source voltage of 80 V and a continuous drain current rating of 75 A at a case temperature (Tc) of 25°C. The device can handle a power dissipation of up to 230 W (Tc), making it suitable for high-power switching applications. Packaged in a TO-220-3 configuration, it offers excellent thermal performance and is ideal for use in power management circuits, motor control, and other high-efficiency applications.
The HUF75542P3 is a high-performance N-Channel Power Field-Effect Transistor (FET) designed for demanding applications. It features a maximum drain-source voltage of 80 V and a continuous drain current rating of 75 A at a case temperature (Tc) of 25°C. The device can handle a power dissipation of up to 230 W (Tc), making it suitable for high-power switching applications. Packaged in a TO-220-3 configuration, it offers excellent thermal performance and is ideal for use in power management circuits, motor control, and other high-efficiency applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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