HN1C01F-Y(TE85L,F)
Tillverkare
TOSHIBA
Datablad
Datablad
Detaljerad specifikation
Detaljerad specifikation
Trans GP BJT NPN 50V 0.15A 6-Pin ytmonterad T/R
Trans GP BJT NPN 50V 0.15A 6-Pin ytmonterad T/R
Beskrivning (eng)
Beskrivning (eng)
The HN1C01F-Y(TE85L,F) from Toshiba is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It operates with a maximum collector-emitter voltage (Vce) of 50V and a collector current (Ic) of 0.15A, making it suitable for various electronic circuits. Packaged in a compact 6-pin surface mount configuration, this transistor offers efficient thermal management and space-saving benefits, ideal for modern electronic designs requiring reliable performance in a small footprint.
The HN1C01F-Y(TE85L,F) from Toshiba is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It operates with a maximum collector-emitter voltage (Vce) of 50V and a collector current (Ic) of 0.15A, making it suitable for various electronic circuits. Packaged in a compact 6-pin surface mount configuration, this transistor offers efficient thermal management and space-saving benefits, ideal for modern electronic designs requiring reliable performance in a small footprint.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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