HN1C01FU-GR,LF(T
Tillverkare
TOSHIBA
Datablad
Datablad
Detaljerad specifikation
Detaljerad specifikation
Trans GP BJT NPN 50V 0.15A 200mW 6-Pin US T/R
Trans GP BJT NPN 50V 0.15A 200mW 6-Pin US T/R
Beskrivning (eng)
Beskrivning (eng)
The HN1C01FU-GR,LF(T) from Toshiba is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage (Vce) of 50V, a collector current (Ic) rating of 0.15A, and a power dissipation of 200mW. Packaged in a compact 6-pin US configuration, this transistor is suitable for various electronic circuits requiring reliable performance in low to moderate power applications. Its robust design ensures efficient operation in diverse environments.
The HN1C01FU-GR,LF(T) from Toshiba is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage (Vce) of 50V, a collector current (Ic) rating of 0.15A, and a power dissipation of 200mW. Packaged in a compact 6-pin US configuration, this transistor is suitable for various electronic circuits requiring reliable performance in low to moderate power applications. Its robust design ensures efficient operation in diverse environments.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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