HFA3102BZ
Tillverkare
RENESAS
Datablad
Datablad
Specifikation
Specifikation
RF TRANS 6 NPN 12V 10GHZ 14SOIC
RF TRANS 6 NPN 12V 10GHZ 14SOIC
Detaljerad specifikation
Detaljerad specifikation
RF Transistor 6 NPN 12V 30mA 10GHz 250mW ytmonterad 14-SOIC
RF Transistor 6 NPN 12V 30mA 10GHz 250mW ytmonterad 14-SOIC
Beskrivning (eng)
Beskrivning (eng)
The HFA3102BZ is a dual NPN transistor array designed for RF applications, featuring a high fT of 10GHz and a collector current of 30mA. It operates at a collector-emitter voltage of 12V and offers low collector leakage currents (<0.01nA). This surface-mounted device is ideal for differential amplifiers and wideband amplification stages.
The HFA3102BZ is a dual NPN transistor array designed for RF applications, featuring a high fT of 10GHz and a collector current of 30mA. It operates at a collector-emitter voltage of 12V and offers low collector leakage currents (<0.01nA). This surface-mounted device is ideal for differential amplifiers and wideband amplification stages.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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