HERAF808G
Tillverkare
TAIWAN SEMICONDUCTORS
Datablad
Datablad
Specifikation
Specifikation
DIODE GEN PURP 1KV 8A ITO220AC
DIODE GEN PURP 1KV 8A ITO220AC
Detaljerad specifikation
Detaljerad specifikation
Diode 1000 V 8A Genomgående hål ITO-220AC
Diode 1000 V 8A Genomgående hål ITO-220AC
Beskrivning (eng)
Beskrivning (eng)
The HERAF808G is a high-efficiency general-purpose diode with a maximum repetitive reverse voltage (VRRM) of 1000 V and a forward current (IF) rating of 8 A. It features a glass passivated chip junction, low forward voltage drop, and high surge current capability. The device is housed in an ITO-220AC package and is suitable for various applications including DC to DC converters and switching mode power supplies.
The HERAF808G is a high-efficiency general-purpose diode with a maximum repetitive reverse voltage (VRRM) of 1000 V and a forward current (IF) rating of 8 A. It features a glass passivated chip junction, low forward voltage drop, and high surge current capability. The device is housed in an ITO-220AC package and is suitable for various applications including DC to DC converters and switching mode power supplies.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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