HERAF1008G
Tillverkare
TAIWAN SEMICONDUCTORS
Datablad
Datablad
Specifikation
Specifikation
DIODE GEN PURP 1KV 10A ITO220AC
DIODE GEN PURP 1KV 10A ITO220AC
Detaljerad specifikation
Detaljerad specifikation
Diode 1000 V 10A Genomgående hål ITO-220AC
Diode 1000 V 10A Genomgående hål ITO-220AC
Beskrivning (eng)
Beskrivning (eng)
The HERAF1008G is a high-efficiency general-purpose diode with a maximum repetitive reverse voltage (VRRM) of 1000 V and a forward current (IF) rating of 10 A. It features a glass passivated chip junction, low forward voltage drop, and high surge current capability. The device is housed in an ITO-220AC package, ensuring reliable performance in various applications.
The HERAF1008G is a high-efficiency general-purpose diode with a maximum repetitive reverse voltage (VRRM) of 1000 V and a forward current (IF) rating of 10 A. It features a glass passivated chip junction, low forward voltage drop, and high surge current capability. The device is housed in an ITO-220AC package, ensuring reliable performance in various applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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