HAT2099H-EL-E
Tillverkare
RENESAS
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 30V 50A LFPAK
MOSFET N-CH 30V 50A LFPAK
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 30 V 50A (Ta) 30W (Tc) ytmonterad LFPAK
N-Kanal 30 V 50A (Ta) 30W (Tc) ytmonterad LFPAK
Beskrivning (eng)
Beskrivning (eng)
The HAT2099H-EL-E is an N-Channel MOSFET designed for power switching applications, featuring a maximum drain-source voltage of 30V and a continuous drain current of 50A. It operates efficiently with a low on-resistance (RDS(on)) of 2.9 mΩ at VGS = 10V, making it suitable for high-density mounting in surface-mounted configurations. The device supports a gate drive voltage of 4.5V and has a channel dissipation rating of 30W, ensuring reliable performance in various applications.
The HAT2099H-EL-E is an N-Channel MOSFET designed for power switching applications, featuring a maximum drain-source voltage of 30V and a continuous drain current of 50A. It operates efficiently with a low on-resistance (RDS(on)) of 2.9 mΩ at VGS = 10V, making it suitable for high-density mounting in surface-mounted configurations. The device supports a gate drive voltage of 4.5V and has a channel dissipation rating of 30W, ensuring reliable performance in various applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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