HAF2015RJ-EL-E
Tillverkare
RENESAS
Datablad
Datablad
Specifikation
Specifikation
ABU / MOSFET
ABU / MOSFET
Detaljerad specifikation
Detaljerad specifikation
Effektbrytare/Förare 1:1 N-Kanal 2A 8-SOP
Effektbrytare/Förare 1:1 N-Kanal 2A 8-SOP
Beskrivning (eng)
Beskrivning (eng)
The HAF2015RJ-EL-E is a N-Channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (VDSS) of 60 V and a continuous drain current (ID) of 2 A. The device includes a built-in over-temperature shut-down circuit, ensuring reliable operation under high junction temperatures. It operates with a gate drive voltage of 5 to 6 V and has a low on-state resistance (RDS(on)) of 130 to 200 mΩ, making it suitable for high-density mounting in various electronic applications.
The HAF2015RJ-EL-E is a N-Channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (VDSS) of 60 V and a continuous drain current (ID) of 2 A. The device includes a built-in over-temperature shut-down circuit, ensuring reliable operation under high junction temperatures. It operates with a gate drive voltage of 5 to 6 V and has a low on-state resistance (RDS(on)) of 130 to 200 mΩ, making it suitable for high-density mounting in various electronic applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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