H11F1M
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
OPTOISOLTR 4170V PHOTO FET 6DIP
OPTOISOLTR 4170V PHOTO FET 6DIP
Detaljerad specifikation
Detaljerad specifikation
Optoisolator MOSFET Utgång 4170Vrms 1 Kanal 6-DIP
Optoisolator MOSFET Utgång 4170Vrms 1 Kanal 6-DIP
Beskrivning (eng)
Beskrivning (eng)
The H11F1M from onsemi is an optoisolator featuring a MOSFET output with a maximum isolation voltage of 4170 Vrms. It consists of a Gallium−Aluminum−Arsenide IRED coupled to a bilateral silicon photo-detector, designed for distortion-free control of low-level AC and DC signals. This device is suitable for applications requiring high isolation and low offset voltage.
The H11F1M from onsemi is an optoisolator featuring a MOSFET output with a maximum isolation voltage of 4170 Vrms. It consists of a Gallium−Aluminum−Arsenide IRED coupled to a bilateral silicon photo-detector, designed for distortion-free control of low-level AC and DC signals. This device is suitable for applications requiring high isolation and low offset voltage.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Hämta lagerstatus
Kontakta säljare
Kontakta Martin eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K