H11D3M
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
OPTOISO 4.17KV TRANS W/BASE 6DIP
OPTOISO 4.17KV TRANS W/BASE 6DIP
Detaljerad specifikation
Detaljerad specifikation
Optoisolator Transistor med Basutgång 4170Vrms 1 Kanal 6-DIP
Optoisolator Transistor med Basutgång 4170Vrms 1 Kanal 6-DIP
Beskrivning (eng)
Beskrivning (eng)
The H11D3M is a high-voltage optoisolator featuring a gallium arsenide infrared emitting diode coupled with a high voltage NPN silicon phototransistor. It offers an isolation voltage of 4170 Vrms and is housed in a 6-pin DIP package, making it suitable for various applications requiring electrical isolation.
The H11D3M is a high-voltage optoisolator featuring a gallium arsenide infrared emitting diode coupled with a high voltage NPN silicon phototransistor. It offers an isolation voltage of 4170 Vrms and is housed in a 6-pin DIP package, making it suitable for various applications requiring electrical isolation.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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