H11D1SM
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
OPTOISO 4.17KV TRANS W/BASE 6SMD
OPTOISO 4.17KV TRANS W/BASE 6SMD
Detaljerad specifikation
Detaljerad specifikation
Optoisolator Transistor med Basutgång 4170Vrms 1 Kanal 6-SMD
Optoisolator Transistor med Basutgång 4170Vrms 1 Kanal 6-SMD
Beskrivning (eng)
Beskrivning (eng)
The H11D1SM is a high-voltage optoisolator featuring a gallium arsenide infrared emitting diode coupled with a high voltage NPN silicon phototransistor. It offers an isolation voltage of 4170 Vrms and a collector-emitter breakdown voltage (BVCEO) of 300 V, making it suitable for various applications in power supply regulation and industrial control systems.
The H11D1SM is a high-voltage optoisolator featuring a gallium arsenide infrared emitting diode coupled with a high voltage NPN silicon phototransistor. It offers an isolation voltage of 4170 Vrms and a collector-emitter breakdown voltage (BVCEO) of 300 V, making it suitable for various applications in power supply regulation and industrial control systems.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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