H11AV1M
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
OPTOISO 4.17KV TRANS W/BASE 6DIP
OPTOISO 4.17KV TRANS W/BASE 6DIP
Detaljerad specifikation
Detaljerad specifikation
Optoisolator Transistor med Basutgång 4170Vrms 1 Kanal 6-DIP
Optoisolator Transistor med Basutgång 4170Vrms 1 Kanal 6-DIP
Beskrivning (eng)
Beskrivning (eng)
The H11AV1M is a general-purpose optoisolator featuring a gallium arsenide infrared emitting diode driving a silicon phototransistor. It offers 4170 Vrms isolation voltage and is housed in a 6-pin DIP package. This device is suitable for applications requiring electrical isolation, such as power supply regulators and digital logic inputs.
The H11AV1M is a general-purpose optoisolator featuring a gallium arsenide infrared emitting diode driving a silicon phototransistor. It offers 4170 Vrms isolation voltage and is housed in a 6-pin DIP package. This device is suitable for applications requiring electrical isolation, such as power supply regulators and digital logic inputs.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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