FQP27P06
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET P-CH 60V 27A TO220-3
MOSFET P-CH 60V 27A TO220-3
Detaljerad specifikation
Detaljerad specifikation
P-Kanal 60 V 27A (Tc) 120W (Tc) Genomgående hål TO-220-3
P-Kanal 60 V 27A (Tc) 120W (Tc) Genomgående hål TO-220-3
Beskrivning (eng)
Beskrivning (eng)
The FQP27P06 is a P-Channel enhancement mode power MOSFET designed for high-performance applications. It features a maximum Drain-Source Voltage (VDSS) of -60 V, a continuous Drain Current (ID) of -27 A, and an on-state resistance (RDS(on)) of 70 mΩ at VGS = -10 V. With a power dissipation capability of 120 W and a maximum junction temperature of 175°C, it is suitable for switched mode power supplies, audio amplifiers, and DC motor control.
The FQP27P06 is a P-Channel enhancement mode power MOSFET designed for high-performance applications. It features a maximum Drain-Source Voltage (VDSS) of -60 V, a continuous Drain Current (ID) of -27 A, and an on-state resistance (RDS(on)) of 70 mΩ at VGS = -10 V. With a power dissipation capability of 120 W and a maximum junction temperature of 175°C, it is suitable for switched mode power supplies, audio amplifiers, and DC motor control.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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