FM18W08-SG
Tillverkare
CYPRESS
Datablad
Datablad
Specifikation
Specifikation
FRAM (FERROELECTRIC RAM) MEMORY
FRAM (FERROELECTRIC RAM) MEMORY
Detaljerad specifikation
Detaljerad specifikation
FRAM (Ferroelectric RAM) Minne IC 256Kbit Parallell 28-SOIC
FRAM (Ferroelectric RAM) Minne IC 256Kbit Parallell 28-SOIC
Beskrivning (eng)
Beskrivning (eng)
The FM18W08 is a 256-Kbit (32 K × 8) ferroelectric RAM (F-RAM) memory IC from Cypress Semiconductor. It features high endurance with 100 trillion read/write cycles and 151 years of data retention. Operating voltage ranges from 2.7 V to 5.5 V, with a low power consumption of 12 mA (max) active current and 20 µA (typ) standby current. The device is housed in a 28-pin SOIC package and is suitable for applications requiring nonvolatile memory with fast write capabilities.
The FM18W08 is a 256-Kbit (32 K × 8) ferroelectric RAM (F-RAM) memory IC from Cypress Semiconductor. It features high endurance with 100 trillion read/write cycles and 151 years of data retention. Operating voltage ranges from 2.7 V to 5.5 V, with a low power consumption of 12 mA (max) active current and 20 µA (typ) standby current. The device is housed in a 28-pin SOIC package and is suitable for applications requiring nonvolatile memory with fast write capabilities.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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