FDS3672
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 100V 7.5A 8SOIC
MOSFET N-CH 100V 7.5A 8SOIC
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 100 V 7.5A (Ta) 2.5W (Ta) ytmonterad 8-SOIC
N-Kanal 100 V 7.5A (Ta) 2.5W (Ta) ytmonterad 8-SOIC
Beskrivning (eng)
Beskrivning (eng)
The FDS3672 is an N-Channel MOSFET with a maximum drain-source voltage of 100 V and a continuous drain current of 7.5 A. It features a low on-state resistance (RDS(on)) of 19 mΩ at VGS = 10 V, optimized for high-frequency applications. The device is housed in an 8-SOIC package and is suitable for various power management applications.
The FDS3672 is an N-Channel MOSFET with a maximum drain-source voltage of 100 V and a continuous drain current of 7.5 A. It features a low on-state resistance (RDS(on)) of 19 mΩ at VGS = 10 V, optimized for high-frequency applications. The device is housed in an 8-SOIC package and is suitable for various power management applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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