FDP8D5N10C
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 100V 76A TO220-3
MOSFET N-CH 100V 76A TO220-3
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 100 V 76A (Tc) 2.4W (Ta), 107W (Tc) Genomgående hål TO-220-3
N-Kanal 100 V 76A (Tc) 2.4W (Ta), 107W (Tc) Genomgående hål TO-220-3
Beskrivning (eng)
Beskrivning (eng)
The FDP8D5N10C is an N-Channel MOSFET featuring a maximum Drain-Source Voltage of 100 V and a continuous Drain Current of 76 A. It has an on-state resistance (RDS(on)) of 8.5 mΩ at VGS = 10 V. This device is designed for high-efficiency applications, utilizing onsemi's POWERTRENCH technology for superior switching performance and low reverse recovery charge.
The FDP8D5N10C is an N-Channel MOSFET featuring a maximum Drain-Source Voltage of 100 V and a continuous Drain Current of 76 A. It has an on-state resistance (RDS(on)) of 8.5 mΩ at VGS = 10 V. This device is designed for high-efficiency applications, utilizing onsemi's POWERTRENCH technology for superior switching performance and low reverse recovery charge.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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