FDN5630
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 60V 1.7A SUPERSOT3
MOSFET N-CH 60V 1.7A SUPERSOT3
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 60 V 1.7A (Ta) 500mW (Ta) ytmonterad SOT-23-3
N-Kanal 60 V 1.7A (Ta) 500mW (Ta) ytmonterad SOT-23-3
Beskrivning (eng)
Beskrivning (eng)
The FDN5630 is an N-Channel MOSFET designed for high efficiency in DC-DC converters, featuring a maximum drain-source voltage of 60V and a continuous drain current of 1.7A. It offers low RDS(on) values of 0.100 Ω at VGS = 10V and 0.120 Ω at VGS = 6V, optimized for high-frequency applications. The device is housed in a compact SOT-23-3 package, ensuring minimal board space usage.
The FDN5630 is an N-Channel MOSFET designed for high efficiency in DC-DC converters, featuring a maximum drain-source voltage of 60V and a continuous drain current of 1.7A. It offers low RDS(on) values of 0.100 Ω at VGS = 10V and 0.120 Ω at VGS = 6V, optimized for high-frequency applications. The device is housed in a compact SOT-23-3 package, ensuring minimal board space usage.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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