FDN339AN
Tillverkare
UMW YOUTAI SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 20V 3A SOT23
MOSFET N-CH 20V 3A SOT23
Detaljerad specifikation
Detaljerad specifikation
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Beskrivning (eng)
Beskrivning (eng)
The FDN339AN is an N-Channel MOSFET designed for applications requiring low on-state resistance and minimal gate charge. With a maximum Drain-Source Voltage of 20V and a continuous Drain Current of 3A, it features RDS(on) values of 38mΩ at VGS = 4.5V and 50mΩ at VGS = 2.5V, ensuring efficient switching performance in compact SOT-23 packaging.
The FDN339AN is an N-Channel MOSFET designed for applications requiring low on-state resistance and minimal gate charge. With a maximum Drain-Source Voltage of 20V and a continuous Drain Current of 3A, it features RDS(on) values of 38mΩ at VGS = 4.5V and 50mΩ at VGS = 2.5V, ensuring efficient switching performance in compact SOT-23 packaging.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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