FDN338P
Tillverkare
UMW YOUTAI SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
20V 1.6A 500MW 115MR@4.5V,1.6A 1
20V 1.6A 500MW 115MR@4.5V,1.6A 1
Detaljerad specifikation
Detaljerad specifikation
P-Kanal 20 V 2.8A (Ta) 400mW (Ta) Ytmonterad SOT-23
P-Kanal 20 V 2.8A (Ta) 400mW (Ta) Ytmonterad SOT-23
Beskrivning (eng)
Beskrivning (eng)
The FDN338P from UMW is a P-Channel MOSFET designed for efficient switching applications. It features a maximum drain-source voltage of 20V and a continuous drain current rating of 2.8A at ambient temperature (Ta). The device has a power dissipation capability of 400mW (Ta) and exhibits a low on-resistance, making it suitable for power management in various electronic circuits. Packaged in a compact SOT-23 surface mount configuration, it is ideal for space-constrained applications requiring reliable performance.
The FDN338P from UMW is a P-Channel MOSFET designed for efficient switching applications. It features a maximum drain-source voltage of 20V and a continuous drain current rating of 2.8A at ambient temperature (Ta). The device has a power dissipation capability of 400mW (Ta) and exhibits a low on-resistance, making it suitable for power management in various electronic circuits. Packaged in a compact SOT-23 surface mount configuration, it is ideal for space-constrained applications requiring reliable performance.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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