FDN337N
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 30V 2.2A SUPERSOT3
MOSFET N-CH 30V 2.2A SUPERSOT3
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 30 V 2.2A (Ta) 500mW (Ta) ytmonterad SOT-23-3
N-Kanal 30 V 2.2A (Ta) 500mW (Ta) ytmonterad SOT-23-3
Beskrivning (eng)
Beskrivning (eng)
The FDN337N is an N-Channel MOSFET designed for low voltage applications, featuring a maximum drain-source voltage of 30V and a continuous drain current of 2.2A. It has a low on-state resistance (RDS(on)) of 0.065Ω at VGS = 4.5V, making it suitable for fast switching and low power loss in compact surface mount designs.
The FDN337N is an N-Channel MOSFET designed for low voltage applications, featuring a maximum drain-source voltage of 30V and a continuous drain current of 2.2A. It has a low on-state resistance (RDS(on)) of 0.065Ω at VGS = 4.5V, making it suitable for fast switching and low power loss in compact surface mount designs.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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