FDN327N
Tillverkare
UMW YOUTAI SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 20V 2A SOT23
MOSFET N-CH 20V 2A SOT23
Detaljerad specifikation
Detaljerad specifikation
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Beskrivning (eng)
Beskrivning (eng)
The FDN327N is an N-Channel MOSFET designed for applications requiring a maximum Drain-Source Voltage of 20V and continuous Drain Current of 2A. It features low on-state resistance (RDS(on)) values of 125mΩ at VGS = 4.5V, making it suitable for efficient power management and battery protection in compact SOT-23 packages.
The FDN327N is an N-Channel MOSFET designed for applications requiring a maximum Drain-Source Voltage of 20V and continuous Drain Current of 2A. It features low on-state resistance (RDS(on)) values of 125mΩ at VGS = 4.5V, making it suitable for efficient power management and battery protection in compact SOT-23 packages.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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