FDD5680
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 60V 8.5A TO252
MOSFET N-CH 60V 8.5A TO252
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 60 V 8.5A (Ta) 2.8W (Ta), 60W (Tc) ytmonterad TO-252AA
N-Kanal 60 V 8.5A (Ta) 2.8W (Ta), 60W (Tc) ytmonterad TO-252AA
Beskrivning (eng)
Beskrivning (eng)
The FDD5680 is an N-Channel MOSFET designed for high-performance applications, featuring a maximum drain-source voltage of 60V and a continuous drain current of 8.5A. It utilizes advanced PowerTrench technology to achieve a low on-state resistance (RDS(on)) of 0.021 Ω at VGS = 10V, ensuring efficient switching with a low gate charge of 33nC. This device is housed in a TO-252 package, suitable for surface mount applications.
The FDD5680 is an N-Channel MOSFET designed for high-performance applications, featuring a maximum drain-source voltage of 60V and a continuous drain current of 8.5A. It utilizes advanced PowerTrench technology to achieve a low on-state resistance (RDS(on)) of 0.021 Ω at VGS = 10V, ensuring efficient switching with a low gate charge of 33nC. This device is housed in a TO-252 package, suitable for surface mount applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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